Single crystal diamond and single crystal AlN Hetero-epitaxy

Single crystal diamond and single crystal AlN  Hetero-epitaxy

Diamond and AlN are two promising materials in the next generation semiconductor materials of wide bandgaps: 6.0 eV for AlN and 5.5 eV for diamond. On the other hand, they have opposite doping characteristics. For AlN, n-type doping is easier than p-type doping, while for diamond, p-type doping is easier than n-type doping. The AlN/diamond heterostructure is expected to combine the features of both materials and appears promising for achieving high-efficiency deep-ultraviolet light-emitting diodes and high-power electron devices.

The key to realizing these devices is single-crystal growth of AlN on diamond.

Here in Diasemi, we have done some preliminary research and some results are both interesting and promising .