Polycrystalline diamond growth on β-Ga2O3 for thermal management
The ever-increasing operating power and frequency of emerging semiconductor device technologies has made thermal management to become an essential field of research.
β-Ga2O3 is an emerging ultra-wide bandgap semiconductor with a bandgap of ∼4.8 eV and a critical electric field of ∼8 MV cm−1 that can potentially outperform current power device technologies based on GaN and SiC.
However, a major disadvantage of this material is its remarkably low anisotropic thermal conductivity which impacts the device performance and reliability under high power density operation.
Diamond materials has the highest thermal conductivity of diamond among all material , it is safe to say that the heterogeneous integration of the CVD diamond thermal conductive film on β-Ga2O3 will continue to be a hot topic .
DIASEMI (https//:www.diasemi.us) has proactively conducted various experimental in this field and initial industrial product development
