DIASEMI Diamond–SiC Composite Heatsink
DIASEMI Diamond–SiC Composite
Redefining Thermal Management for Advanced Semiconductor Systems
At DIASEMI, we are advancing the frontier of thermal materials by solving one of the most critical bottlenecks in semiconductor packaging: the simultaneous optimization of thermal conductivity and thermal expansion compatibility.
Our latest innovation — Diamond–SiC composite material platform — delivers a breakthrough in both dimensions.
1. Performance Breakthrough: Engineering Beyond Traditional Limits
DIASEMI Diamond–SiC composites achieve:
Thermal Conductivity: >700 W/m·K
CTE: ~2.6 ppm/°C
This CTE is precisely engineered to match silicon (~2.5 ppm/°C), enabling:
<4% mismatch
Significantly reduced thermomechanical stress
Enhanced device reliability and lifetime
Breaking the Industry Trade-off
Conventional materials force a compromise:
Material SystemThermal ConductivityCTELimitationPure Diamond1000–2200 W/m·K1.0–2.0 ppm/°CCTE mismatch to SiDiamond–Cu / Diamond–Al400–600 W/m·K5–8 ppm/°CInsufficient matching
DIASEMI Diamond–SiC uniquely delivers: ✔ High thermal conductivity ✔ Near-perfect silicon CTE match
Enabling true system-level thermal optimization, not partial improvement.
2. Designed for Next-Generation High Heat Flux Applications
As chip power density exceeds 500 W/cm² and moves toward kW-class regimes, legacy solutions are reaching physical limits.
DIASEMI Diamond–SiC composites are engineered for:
AI accelerators (GPU / NPU heat spreaders)
SiC & GaN power modules
High-power laser systems
Advanced semiconductor packaging substrates
Value Proposition
Superior heat spreading vs. Cu / AlN
Minimal thermal stress at die interface
High structural stability under thermal cycling
Compatibility with advanced packaging architectures
3. DIASEMI Dual Technology Platform
DIASEMI is not limited to a single material approach. We have built a complementary thermal materials platform:
(1) Ultra-High Conductivity CVD Diamond
Thermal conductivity: up to 2200 W/m·K
Thickness: 5–30 μm
Wafer scale: up to 8 inch
Surface roughness: Ra < 4 nm
Optimized for maximum heat spreading
(2) Diamond–SiC Engineered Composites
Tunable CTE (~2.6 ppm/°C)
High thermal conductivity (~700 W/m·K)
Excellent interface reliability
Optimized for integration and reliability
4. From Material Innovation to System Integration
At DIASEMI, we focus on end-to-end thermal solutions, not standalone materials.
Our portfolio includes:
Ultra-thin diamond heat spreaders
Diamond-based packaging substrates
Diamond–metal and ceramic composites
Wafer-scale integration solutions
This enables:
Direct compatibility with semiconductor processes
Scalable manufacturing
Full-stack thermal design capability
5. Strategic Impact
The introduction of DIASEMI Diamond–SiC composites marks a critical transition in the industry:
From “high thermal conductivity materials” → to “thermomechanically optimized system materials”
This shift is essential for:
AI infrastructure scaling
Wide bandgap semiconductor adoption
High-power photonics systems
6. DIASEMI Vision
We believe the future of semiconductor thermal management lies in:
Material precision engineering
Multi-physics optimization (thermal + mechanical)
Wafer-level integration
DIASEMI Diamond–SiC composites represent a foundational step toward that future.
