DIASEMI Ultra high thermal conductive Diamond and Copper Composite Heatsink
Diamond / Copper High Thermal Conductivity Composite
Engineered Heat Spreader Platform for Extreme Power Density
1. Product Overview
DIASEMI™ DI-CU Ultra Thermal™ is a next-generation diamond-reinforced copper composite designed for ultra-high heat flux applications.
By integrating engineered carbide interlayers (TiC / WC / ZrC) with optimized diamond architecture, the material achieves exceptional thermal conductivity with tailored thermal expansion, enabling reliable operation in next-generation semiconductor and photonics systems.
2. Key Features
Ultra-high thermal conductivity: up to 850 W·m⁻¹·K⁻¹
CTE matching to semiconductors: 6–8 ×10⁻⁶ K⁻¹
Low interfacial thermal resistance via engineered carbide bonding
High density (>99%) for maximum heat transport efficiency
Excellent thermal stability under high power cycling
Customizable geometry and thickness
3. Typical Applications
Semiconductor & Electronics
GaN / SiC RF power devices
Laser diode heat spreaders
High-performance CPUs / GPUs
Power modules (IGBT, MOSFET)
Photonics
High-power laser packaging
Optical benches
IR / EUV systems thermal platforms
Advanced Systems
Aerospace electronics
Fusion / high-energy systems
Microwave and RF components
4. Material Specifications
| Property | Typical Value | Test Method |
|---|---|---|
| Thermal Conductivity | 700 – 850 W·m⁻¹·K⁻¹ | Laser Flash |
| Coefficient of Thermal Expansion (CTE) | 6 – 8 ×10⁻⁶ K⁻¹ | Dilatometry |
| Density | > 99% theoretical | Archimedes |
| Specific Heat | ~385 J·kg⁻¹·K⁻¹ | DSC |
| Electrical Resistivity | 2–4 µΩ·cm | Four-point probe |
| Bending Strength | 250–350 MPa | ASTM C1161 |
| Operating Temperature | up to 500°C (air) | — |
5. Interface Engineering Options
(A) WC Interface (Standard Industrial Grade)
Interlayer: 180–220 nm WC
Thermal conductivity: 750–820 W·m⁻¹·K⁻¹
Best for: scalable production, cost-performance balance
(B) TiC Interface (High-End Performance Grade)
Interlayer: 200–250 nm TiC
Thermal conductivity: 800–850 W·m⁻¹·K⁻¹
Best for: extreme heat flux, premium devices
(C) ZrC Interface (High Reliability Grade)
Interlayer: 150–250 nm ZrC
Thermal conductivity: 600–750 W·m⁻¹·K⁻¹
Best for: harsh environments, long lifetime systems
6. Microstructure Design
| Parameter | Specification |
|---|---|
| Diamond Type | Synthetic (HPHT / CVD compatible) |
| Particle Size | 100 – 200 µm (optimized) |
| Volume Fraction | 60 – 70% |
| Distribution | Uniform / bimodal optional |
| Interface Layer | Continuous carbide coating |
7. Available Formats
Plates: up to 150 × 150 mm
Thickness: 0.3 – 35 mm
Custom shapes:
Laser cut
CNC machined
Metallized (Ni/Au /Ag/Pt /Cu etc optional)
8. Surface & Finishing Options
Polished (Ra < 1 nm available)
Double-side lapping
Metallization:
Ni / Au
Ti / Pt / Au/Pt
Direct bonding ready surfaces
9. Process Technology
DIASEMI utilizes a hybrid manufacturing platform:
Diamond surface metallization
Magnetron sputtering
Salt bath / diffusion coating
Composite formation:
Pressure melt infiltration (preferred)
Vacuum hot pressing
SPS (R&D / prototyping)
10. Performance Benchmark
| Material | Thermal Conductivity (W·m⁻¹·K⁻¹) | CTE (×10⁻⁶ K⁻¹) |
|---|---|---|
| Copper | ~400 | 17 |
| AlN | 170–200 | 4.5 |
| SiC | 180–270 | 4 |
| CVD Diamond | 1200–2000 | 1–2 |
| DIASEMI DI-CU Ultra Thermal™ | 700–950 | 6–8 |
11. Design Advantages
✔ Compared to Copper
2× higher thermal conductivity
50% lower CTE
✔ Compared to Ceramics (AlN / SiC)
3–4× higher thermal conductivity
Better heat spreading capability
✔ Compared to CVD Diamond
Lower cost
Easier machining
Better CTE matching
12. Reliability
Thermal cycling stability: >1000 cycles (−40°C to 200°C)
No delamination at interface
High thermal fatigue resistance)
13. Design Guidelines
Optimal interlayer thickness: ~200 nm
Avoid excessive coating thickness (>300 nm)
Maintain high diamond volume fraction (~65%)
Ensure high Cu purity (≥99.99%)
14. Ordering Information
sales@semixicon.com
15. Customization Options
Tailored CTE for specific chips (GaN / Si / SiC)
Gradient interface design
Microchannel integration for liquid cooling
Large-area substrates
16. Summary
DIASEMI™ DI-CU Ultra Thermal™ provides:
The optimal balance between ultra-high thermal conductivity, manufacturability, and system compatibility
It bridges the gap between:
CVD diamond (performance)
Copper (cost & processability)
