β-Ga2O3 film on a diamond substrate

β-Ga2O3 film on a diamond substrate

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β-Ga2O3 is a promising next generation of semiconductor materials of a large 4.8-eV bandgap, controllable n-type doping with Si/Sn/Ge, and relatively high electron mobility of ~ 200 cm²/V s,however the material is with relatively low thermal conductivity ,high thermal conductive diamond substrate might be a perfect enabler for the combination to be a great candidate for next success.

Direct bonding of β-Ga2O3 film on a diamond substrate at 250ºC under atmospheric conditions was recently developed. The β-Ga2O3 surface before bonding was activated by oxygen plasma irradiation, while the diamond surface was cleaned with H2SO4/H2O2 and NH3/H2O2 mixtures. The β-Ga2O3anddiamond surfaces adhered to one another under atmospheric conditions. By annealing the contacted specimen at 250ºC, atomic bonds were formed without voids, cracks, or severe crystallinity damages.  Direct bonding of β-Ga2O3 and diamond might pave the a new way for a promising ultra-wide bandgap power semiconductor materials