MPCVD Diamond film on KTN (KTa1-xNbxO3)
November27, 2024
MPCVD Diamond film on KTN (KTa1-xNbxO3)
A recent research explores the use of potassium tantalum niobate (KTN) crystals as a substrate for growing high-quality diamond thin films via microwave plasma chemical vapor deposition (MPCVD). Diamonds are valuable due to their excellent properties, such as a high melting point, good insulation, and high thermal conductivity, making them ideal for high-power devices and sensors. However, producing single-crystal diamonds is costly, and heteroepitaxial growth on foreign substrates like KTN provides a practical alternative. The lattice parameter of KTN closely matches that of diamond, enabling high-quality crystal growth.
Diamonds were grown on large KTN single crystals, and the effects of growth duration on film quality were studied. Characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman spectroscopy showed that as growth time increased, diamond quality improved.
Analysis revealed the formation of a TaC transition layer during the early stages, which diminished over time, indicating stable diamond growth. The 12-hour sample displayed larger, evenly distributed grains and a higher proportion of diamond phase, showing superior properties. Photocatalytic testing demonstrated that the 12-hour diamond sample achieved a 91.9% degradation of Rhodamine B (RhB), outperforming the 3-hour sample by 1.6 times.
These results highlight the effectiveness of KTN as a substrate for growing high-quality diamonds, improving their potential for practical applications.
11/27/2024
San Francisco
James Lee
