Damond and TaC composite coatings for efficient heat dissipation in GaN semiconductor devices

Damond and TaC composite coatings for efficient heat dissipation in GaN semiconductor devices



News in brief

Ta-C(tetrahedral amorphous carbon) shows thermal conductivity potential as a transition layer for GaN semiconductor devices and growing diamond

The UNCD(ultra-nanocrystalline diamond) generated by plasma on the surface of ta-C films easily fuses with the UNCD of diamond nucleation layer, reducing the interfacial thermal resistance

The microwave plasma deposited diamond film contains MCD and NCD, which cover the ta-C film layer uniformly without peeling

The ta-layer avoids the elemental diffusion and plasma etching of GaN, thus ensuring GaN device performance

Further readings

https://www.sciencedirect.com/science/article/abs/pii/S0257897225000581