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Diamond CVD Coating on Si - Wafer

Diamond CVD Coating on Si - Wafer

Diamond CVD Coating on Si - Wafer

Product Properties:


DIAMOND LAYER


DESCRIPTION: Diamond CVD On Silicon Wafer
GROWTH METHOD: MPCVD
THICKNESS: 15±5µm
GROWING ZONE: 50.8±0.2mm
SURFACE ROUGHNESS: 0.7 µm
GRAIN SIZE: ≤20 µm
FWHM (D111): 0.355 nm
THERMAL CONDUCTIVITY: 1800-2000W/m.K
WARPAGE: <30 µm
TTV: <10 µm
CTE: 1.3


SI WAFER


MODEL DOPING AGENT: P/B
 PULLING METHOD: CZ
 CRYSTAL ORIENTATION: 100
 RESITIVITY RANGE: 20-30 ohm-cm
 DIAMETER: 50.8±0.2mm
 DEVIATION DEGREE OF CRYSTAL ORIENTAION:<1°
THICKENSS AND TOLERANCE: 30000±20 µm
 TTV: ≤10 µm
 WARPAGE: ≤10 µm
 SURFACE FINISH: Single sided polishing



Applications

DIASIMPCVD DIAMOND COATED SILICON WAFERS









PRODUCT
 CODE
DIASEMI DIAMOND
#
WAFER
SIZE(mm)
WAFER
TYPE
DIASEMI CAOTING
 THICKNESS(µm)
PRICE USD
DISI100-01DIASEMI-N1100
1$
DISI100-02DIASEMI-N1100
2$
DISI100-05DIASEMI-N1100
5$
DISI100-10DIASEMI-N1100
10$
DISI100-15DIASEMI-N1100
15$
DISI150-01DIASEMI-N1150
1$
DISI150-02DIASEMI-N1150
2$
DISI150-05DIASEMI-N1150
5$
DISI150-10DIASEMI-N1150
10$
DISI150-15DIASEMI-N1150
15$
DISI200-01DIASEMI-N1200
1$
DISI200-02DIASEMI-N1200
2$
DISI200-05DIASEMI-N1200
5$
DISI200-10DIASEMI-N1200
10$
DISI200-15DIASEMI-N1200
15$


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