Diamond CVD Coating on Si - Wafer

DIAMOND LAYER
DESCRIPTION: Diamond CVD On Silicon Wafer
GROWTH METHOD: MPCVD
THICKNESS: 15±5µm
GROWING ZONE: 50.8±0.2mm
SURFACE ROUGHNESS: 0.7 µm
GRAIN SIZE: ≤20 µm
FWHM (D111): 0.355 nm
THERMAL CONDUCTIVITY: 1800-2000W/m.K
WARPAGE: <30 µm
TTV: <10 µm
CTE: 1.3
SI WAFER
MODEL DOPING AGENT: P/B
PULLING METHOD: CZ
CRYSTAL ORIENTATION: 100
RESITIVITY RANGE: 20-30 ohm-cm
DIAMETER: 50.8±0.2mm
DEVIATION DEGREE OF CRYSTAL ORIENTAION:<1°
THICKENSS AND TOLERANCE: 30000±20 µm
TTV: ≤10 µm
WARPAGE: ≤10 µm
SURFACE FINISH: Single sided polishing
DIASI | MPCVD DIAMOND COATED SILICON WAFERS | ||||
PRODUCT CODE | DIASEMI DIAMOND # | WAFER SIZE(mm) | WAFER TYPE | DIASEMI CAOTING THICKNESS(µm) | PRICE USD |
DISI100-01 | DIASEMI-N1 | 100 | 1 | $ | |
DISI100-02 | DIASEMI-N1 | 100 | 2 | $ | |
DISI100-05 | DIASEMI-N1 | 100 | 5 | $ | |
DISI100-10 | DIASEMI-N1 | 100 | 10 | $ | |
DISI100-15 | DIASEMI-N1 | 100 | 15 | $ | |
DISI150-01 | DIASEMI-N1 | 150 | 1 | $ | |
DISI150-02 | DIASEMI-N1 | 150 | 2 | $ | |
DISI150-05 | DIASEMI-N1 | 150 | 5 | $ | |
DISI150-10 | DIASEMI-N1 | 150 | 10 | $ | |
DISI150-15 | DIASEMI-N1 | 150 | 15 | $ | |
DISI200-01 | DIASEMI-N1 | 200 | 1 | $ | |
DISI200-02 | DIASEMI-N1 | 200 | 2 | $ | |
DISI200-05 | DIASEMI-N1 | 200 | 5 | $ | |
DISI200-10 | DIASEMI-N1 | 200 | 10 | $ | |
DISI200-15 | DIASEMI-N1 | 200 | 15 | $ |