Ultra-High Thermal Conductivity Diamond Wafer

Applications

Ultra-High Thermal Conductivity Diamond Wafer

Technical Specifications

Preparation Method                            MPCVD

Dimension                                           10*10mm

Thickness                                            0.4mm

Thickness Tolerance                          ±0.05mm

Surface Roughness                            Lapped Ra<200nm; Polished Ra<10nm

Thermal Conductivity                         >1800W/mk @300K

Thermal Expansion Coefficient          1X10-6@300K

Specific Heat Capacity                       0.502J/gK@300K

Density                                                3.52(X103Kg*m-3)

Vicker's Hardness                               65-100GPa    

Young's Modulus                                1050GPa