Heteroepitaxial growth of β-Ga2O3 thin films on diamond by radio frequency magnetron sputtering

While β-Ga2O3 is a promising new material for extreme-condition electronics, it suffers from a low thermal conductivity. One of many remarkable properties of diamond is its unsurpassed thermal conductivity, a hybrid of the two might be a perfect candidate for next generation semiconductor material.

An added attractive possibility for the combination of β-Ga2O3/diamond hetero-structures is the easy p-type doping of diamond with boron, since at present there is no feasible method for arranging p-type Ga2O3, which is naturally n-type.

Hetero-epitaxial growth of β-Ga2O3 thin films on single-crystalline diamond (111) wafers using RF magnetron sputtering is one of promising path.

Techniques such as van der Waals and wafer bonding of β-Ga2O3 on diamond have previously been reported, but not direct-growth processes like RF sputtering.

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