Heterogeneous integration of thick GaN and polycrystalline diamond

Direct heterogeneous integration of GaN on diamond enhances device performance and reliability for high-power applications, while the implementation on thick GaN films and polycrystalline diamond (p-diamond) substrates remains challenging.

Direct bonding between thick GaN films (∼370 μm) and p-diamond substrates was achieved thanks to a novel technology.  A dynamic plasma polishing (DPP) technique was adopted on the diamond to flatten surficial spikes from maximum 15 nm to 1.2 nm, obtaining a smooth surface with 0.29 nm Ra, achieving a robust GaN/diamond bonding with high bonding rate of ∼92% at room temperature combining the surface-activated bonding (SAB) method. The chemical status, thermal stress, and interfacial microstructures of GaN/diamond heterostructures were analyzed, revealing a residual stress of ∼200 MPa at the GaN/diamond interface, and the asymmetric increase of interfacial stress at rising temperature demonstrates the effectiveness of amorphous interlayer to release the stress.