Heterogeneous Bonded Diamond and Si/SiC/GaN/AlN

Heterogeneous Bonded Diamond and Si/SiC/GaN/AlN

Product Properties:

Diamond sheets, films and substrates are seeing rapid growth in the semiconductor industry thanks to diamond materials ‘extremely high heat dissipation capabilities, in addition, diamond has a wide band breakdown voltage (10 MV/cm) than current semiconductor materials Si(≈0.3MV/cm), SiC(≈3MV/cm), GaN(≈10MV/cm) which standards for excellent high electrical insulation and can unleash the design of miniature devices.

However ,the lattice mismatch caused by the thermal expansion and HTHP etc in the bonding of diamond substrate and the semiconductor devices has been the major obstacle in the mass production of direct bonding ,thus the surface roughness and ultra-precision flatness is crucial in the bonding process.

DIASEMI has extensive technology knowhow of SAB (Surface Activated Bonding) of the diamond and semiconductor materials and world class nanometer scale surface roughness and flatness machining capabilities amassed in producing wafer chuck tables for lithographic application and ultra-precision inspection stages. Collaborating with the universities, independent researching labs and fab giants, DISEMI is suppling diamond direct bonding with Si/SiC/GaN/AlN samples and bonding services.