APPLICATIONS:

HIGH POWER RF, OPTOELECTRONICS, HIGH VOLTAGE POWER SEMICONDUCTOR

SIZE                                         2-150MM SQUARE OR CIRCULAR (IRREGUALR SHAPE CUTMOZIABLE)

GROWTH METHOD:                                                                MPCVD

THICKNESS:                                                                             2; 5; 10; 50 μm

DENSITY:                                                                3.52（×103Kg·m-3）

VIKERS HARDNESS:                                             80-82GPa

YOUNG’S MODULUS                                             1050GPa

SURFACE ROUGHNESS:                                                         Ra < 10nm

THERMAL CONDUCTIVITY:                                                     700W/m·K

THERMAL EXPANSION:                                                1×10-6/K@300K

SPECIFIC HEAT CAPACITY:                                                      0.502J/gK@300K

RESISTIVITY:                                                                              0.02-0.05Ω/CM

BOW:                                                                                           < 50μm*

WARPAGE:                                                                  < 100μm*

TTV:                                                                                             <30 µm*

THICKNESS TOLERANCE:                                               ±0.05mm*

·         Standard Specs on 150mm wafer DIASEMI diamond film

Advantages:

·         Ultra-high thermal conductivity

·         Electrically conductive

·         Minimal electrical RF and conductivity loss

·         Bounty  of sizes ,shapes thickness and metallization options, customizations friendly

·         Flexible bonding solutions